2SD886 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 3 a collector-base voltage v (br)cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 5 ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 50 v, i e =0 1 a emitter cut-off current i ebo v eb = 3 v, i c =0 1 a h fe(1) v ce = 2 v, i c = 20 ma 100 dc current gain h fe(2) v ce = 2 v, i c = 1 a 100 400 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 200 ma 0.5 v base-emitter saturation voltage v be(sat) i c = 2 a, i b = 200 ma 2 v transition frequency f t v ce =5v, i c = 100 ma 80 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 45 pf 1 2 3 to-126c 1. emitter 2. collector 3. base 2SD886 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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